? semiconductor components industries, llc, 2011 january, 2011 ? rev. 8 1 publication order number: mjd340/d mjd340 (npn) mjd350 (pnp) high voltage power transistors dpak for surface mount applications designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. features ? lead formed for surface mount applications in plastic sleeves (no suffix) ? electrically similar to popular mje340 and mje350 ? 300 v (min) ? v ceo(sus) ? 0.5 a rated collector current ? epoxy meets ul 94 v ? 0 @ 0.125 in ? esd ratings: human body model, 3b 8000 v machine model, c 400 v ? these are pb ? free packages maximum ratings rating symbol max unit collector ? emitter voltage v ceo 300 vdc collector ? base voltage v cb 300 vdc emitter ? base voltage v eb 3 vdc collector current ? continuous ? peak i c 0.5 0.75 adc total power dissipation @ t c = 25 c derate above 25 c p d 15 0.12 w w/ c total power dissipation (note 1) @ t a = 25 c derate above 25 c p d 1.56 0.012 w w/ c operating and storage junction temperature range t j , t stg ? 65 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r jc 8.33 c/w thermal resistance, junction ? to ? ambient (note 1) r ja 80 c/w leading temperature for soldering purpose t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. these ratings are applicable when surface mounted on the minimum pad sizes recommended. silicon power transistors 0.5 ampere 300 volts, 15 watts dpak case 369c style 1 marking diagram a = assembly location y = year ww = work week j3x0 = device code x= 4 or 5 g=pb ? free package 1 2 3 4 ayww j3x0g see detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. ordering information http://onsemi.com
mjd340 (npn) mjd350 (pnp) http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? (t c = 25 c unless otherwise noted) ??????????????????????? ??????????????????????? characteristic ???? ???? ???? ???? ??? ??? ??? ??? ????????????????????????????????? ????????????????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? collector ? emitter sustaining voltage (note 2) (i c = 1 ma, i b = 0) ???? ???? ???? ???? ???? ???? ??? ??? ??? ? ??? ??? ??? v ??????????????????????? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ???? ???? ? ??? ??? ??? 0.1 ??? ??? ??? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ? ??? ??? 0.1 ??? ??? ????????????????????????????????? ????????????????????????????????? on characteristics (note 2) ??????????????????????? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ???? ???? ??? ??? ??? ??? ??? ??? ? ??????????????????????? ??????????????????????? ??????????????????????? collector ? emitter saturation voltage (i c = 100 ma, i b = 10 ma) ???? ???? ???? ???? ???? ???? ? ??? ??? ??? 1 ??? ??? ??? ??????????????????????? ??????????????????????? ??????????????????????? ? emitter on voltage (i c = 1 a, v ce = 10 v) ???? ???? ???? ???? ???? ???? ? ??? ??? ??? 1.5 ??? ??? ??? ????????????????????????????????? dynamic characteristics ??????????????????????? ??????????????????????? ??????????????????????? current gain ? bandwidth product (i c = 50 ma, v ce = 10 v, f = 10 mhz) ???? ???? ???? ???? ???? ???? ??? ??? ??? ? ??? ??? ??? mhz 2. pulse test: pulse width 300 s, duty cycle 2%. figure 1. dc current gain i c , collector current (madc) 300 10 1 100 50 3 20 30 50 70 100 200 300 500 200 70 30 20 2510 7 h fe , dc current gain t j = 150 c +25 c v ce = 2 v v ce = 10 v -55 c +100 c typical characteristics mjd340
mjd340 (npn) mjd350 (pnp) http://onsemi.com 3 v, voltage (volts) 1 10 figure 2. ?on? voltages i c , collector current (ma) 0 20 30 50 100 200 500 0.4 0.8 0.6 0.2 300 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 10 v i c /i b = 5 mjd340 1 5 0 7 10 20 30 100 200 0.8 0.6 50 70 300 500 0.4 0.2 1 200 5 figure 3. dc current gain i c , collector current (ma) 10 7 10 20 30 100 200 figure 4. ?on? voltages i c , collector current (ma) 100 70 v, voltage (volts) 20 50 70 t j = 25 c v be(sat) @ i c /i b = 10 v be @ v ce = 10 v t j = 150 c 25 c v ce = 2 v v cc = 10 v -55 c 300 500 h fe , dc current gain 50 30 i c /i b = 10 i c /i b = 5 v ce(sat) mjd350 mjd350 t, time (ms) 1 0.01 0.01 0.5 0.2 0.1 0.05 0.02 r(t), transient thermal 0.05 1 2 5 10 20 50 100 200 1 k 500 r jc(t) = r(t) r jc r jc = 8.33 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.2 0.05 single pulse 0.1 0.7 0.3 0.07 0.03 0.02 0.1 0.5 0.2 figure 5. thermal response resistance (normalized) 0.03 0.3 3 30 300 0.01
mjd340 (npn) mjd350 (pnp) http://onsemi.com 4 i c , collector current (ma) 1000 10 v ce , collector-emitter voltage (volts) 1 20 30 50 70 100 200 500 300 500 s figure 6. active region safe operating area 200 300 500 700 100 0 100 20 50 30 10 2 5 3 1 ms dc 100 s there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 6 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 5. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. figure 7. power derating 25 25 t, temperature ( c) 0 50 75 100 125 150 20 15 10 5 p d , power dissipation (watts) 2.5 0 2 1.5 1 0.5 t a t c t c t a ordering information device package shipping ? mjd340g dpak (pb ? free) 75 units / rail mjd340rlg dpak (pb ? free) 1800 / tape & reel MJD340T4G dpak (pb ? free) 2500 / tape & reel mjd350g dpak (pb ? free) 75 units / rail mjd350t4g dpak (pb ? free) 2500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
mjd340 (npn) mjd350 (pnp) http://onsemi.com 5 package dimensions dpak case 369c ? 01 issue d style 1: pin 1. base 2. collector 3. emitter 4. collector 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 mm inches scale 3:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. mjd340/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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